2N2369A semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5277 issue 2 high speed, medium power, npn switching transistor in a hermetically sealed to-18 package for high reliability applications features ? silicon planar epitaxial npn transistor ? hermetic to18 package ? cecc screening options v cbo collector ? base voltage v ceo collector ? emitter voltage v ebo emitter ? base voltage i c collector current p d total device dissipation @ t a =25c derate above 25c p d total device dissipation @ t c =25c derate above 25c t stg , t j operating and storage temperature range r jc thermal resistance junction-case r ja thermal resistance junction-ambient 40v 15v 4.5v 200ma 360mw 2.06mw / c 680mw 6.85mw / c ?65 to +200c 146c/w 486c/w mechanical data dimensions in mm (inches) to-18 (to-206aa) absolute maximum ratings (t a = 25c unless otherwise stated) pin 1 ? emitter underside view pin 2 ? base pin 3 ? collector
semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
2N2369A semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5277 issue 2 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. test conditions min. typ. max. i c = 10ma i c = 10 a i e = 10 a v ce = 20v v cb = 20v t a = +150c i c = 10ma i b = 1ma t a = +125c i c = 30ma i b = 3ma i c = 100ma i b = 10ma i c = 10ma i b = 1ma i c = 30ma i b = 3ma i c = 100ma i b = 10ma i c = 10ma i b = 1ma t a = -55c to +125c i c = 10ma v ce = 0.35v i c = 10ma v ce = 1v i c = 30ma v ce = 0.40v i c = 100ma v ce = 1v i c = 10ma v ce = 0.35v t a = ?55c i c = 10ma v ce = 10v f = 100mhz i e = 0 v cb = 5v f = 1mhz i c = 10ma v cc = 10v i b1 = ?i b2 = 10ma i c = 10ma v cc = 3v i b1 = 3ma i b2 = ?1.5ma electrical characteristics (t a = 25c unless otherwise stated) v (br)ceo* collector ? emitter breakdown voltage v (br)cbo collector ? base breakdown voltage v (br)ebo emitter ? base breakdown voltage i ces collector ? emitter cut-off current i cbo collector ? base cut-off current v ce(sat) * collector ? emitter saturation voltage v be(sat) * base ? emitter saturation voltage h fe * dc current gain f t transition frequency c cbo output capacitance t s storage time t on turn?on time t off turn?off time 15 40 4.5 0.40 30 0.20 0.30 0.25 0.5 0.70 0.8 0.85 0.9 1.15 1.1 1.6 0.59 1.02 40 120 40 120 30 71 20 20 50 500 675 2.3 4 613 912 13 18 v v v a a v v ? mhz pf ns ns * pulse test: t p 300 s, ? 2%. parameter unit
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